TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
Identifieur interne : 000388 ( Main/Repository ); précédent : 000387; suivant : 000389TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
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Abstract
We have investigated the morphology of free-standing self-assembled InSb quantum dots (QDs) grown by liquid-phase epitaxy (LPE) under conventional growth conditions on InAs(001) substrate. Two growth modes, Volmer-Weber for low-density (5 × 108 cm-2) large QDs with 10-12 nm in a height and Stranski-Krastanow for high-density (1 x 1010 cm-2) small QDs with a height of 3-4 nm, were identified in dependence on a critical growth temperature of InSb QDs formation. Characterization of the sample surface was performed using transmission electron microscopy (TEM) that allowed us to observe some features of the InSb QD shape which transforms from a full dome to truncated one with increasing QD lateral size from 15 to 40 nm, respectively. Using pseudo-moire pattern appearing in plan-view diffraction TEM image the critical size of the InSb QD for plastic deformation was evaluated.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface</title><author><name sortKey="Bert, N A" uniqKey="Bert N">N. A. Bert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Institute, 26 Politekhnicheskaya Street</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Saint-Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Nevedomsky, V N" uniqKey="Nevedomsky V">V. N. 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Two growth modes, Volmer-Weber for low-density (5 × 10<sup>8</sup> cm<sup>-2</sup>) large QDs with 10-12 nm in a height and Stranski-Krastanow for high-density (1 x 10<sup>10</sup> cm<sup>-2</sup>) small QDs with a height of 3-4 nm, were identified in dependence on a critical growth temperature of InSb QDs formation. Characterization of the sample surface was performed using transmission electron microscopy (TEM) that allowed us to observe some features of the InSb QD shape which transforms from a full dome to truncated one with increasing QD lateral size from 15 to 40 nm, respectively. Using pseudo-moire pattern appearing in plan-view diffraction TEM image the critical size of the InSb QD for plastic deformation was evaluated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>267</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface</s1></fA08><fA11 i1="01" i2="1"><s1>BERT (N. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>NEVEDOMSKY (V. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEMENT'EV (P. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>MOISEEV (K. D.)</s1></fA11><fA14 i1="01"><s1>Ioffe Institute, 26 Politekhnicheskaya Street</s1><s2>Saint-Petersburg 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>77-80</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000182578090190</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0139563</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the morphology of free-standing self-assembled InSb quantum dots (QDs) grown by liquid-phase epitaxy (LPE) under conventional growth conditions on InAs(001) substrate. 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